Samsung announces its first ever 10-nanometer class 8Gb LPDDR5 flash memory for the upcoming 5G and Artificial Intelligence (AI)-powered mobile applications.
Samsung announces its first ever 10-nanometer class 8Gb LPDDR5 flash memory for the upcoming 5G and Artificial Intelligence (AI)-powered mobile applications.
Press Release
Samsung announces its first ever 10-nanometer class 8Gb LPDDR5 flash memory for the upcoming 5G and Artificial Intelligence (AI)-powered mobile applications. Many companies are already delving deeper into 5G technology including Intel, Huawei, and others. The new 8Gb LPDDR5 flash memory is the latest addition to Samsung’s growing premium DRAM line-up which includes the 10-nanometer class 16Gb GDDR6 DRAM which was up for mass production since December 2017 along with the 16Gb DDR5 DRAM.
Performance
The 8Gb LPDDR5 boasts a data rate of up to 6,400 megabits per second (Mb/s), which is 1.5 times as fast as the mobile DRAM chips used in current flagship mobile devices (LPDDR4X, 4266Mb/s). With the increased transfer rate, the new LPDDR5 can send 51.2 gigabytes (GB) of data, or approximately 14 full-HD video files (3.7GB each), in a second.
Power
The 10nm-class LPDDR5 DRAM will be available in two bandwidths – 6,400Mb/s at a 1.1 operating voltage (V) and 5,500Mb/s at 1.05V – making it the most versatile mobile memory solution for next-generation smartphones and automotive systems. This performance advancement has been made possible through several architectural enhancements. By doubling the number of memory “banks” – subdivisions within a DRAM cell – from eight to 16, the new memory can attain a much higher speed while reducing power consumption. The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip’s ultra-high-speed performance.
Power Efficiency
The Samsung 10nm-class LPDDR5 has an energy saving function that works by lowering the operating voltage in accordance with the operating speed of the corresponding application processor, when in active mode. It also has been configured to avoid overwriting cells with ‘0’ values. In addition, the new LPDDR5 chip will offer a ‘deep sleep mode’, which cuts the power usage to approximately half the ‘idle mode’ of the current LPDDR4X DRAM. Thanks to these low-power features, the 8Gb LPDDR5 DRAM will deliver power consumption reductions of up to 30%, maximizing mobile device performance and extending the battery life of smartphones.
The new Samsung 10nm-class 8Gb LPDDR5 DRAM is expected to power the next-generation UHD-compatible mobile devices worldwide.
