New NAND Flash manufacturing node will allow greater storage densities and other benefits, is set to be rolled out across their product range in Q4 2014.
New NAND Flash manufacturing node will allow greater storage densities and other benefits, is set to be rolled out across their product range in Q4 2014.
PRESS RELEASE
LONDON, UK., April 23, 2014 – SanDisk Corporation, a global leader in flash storage solutions, today announced the availability of its 1Z-nanometer (nm) technology, the most advanced NAND flash process node in the world. The 15nm technology will ramp on both two bits-per-cell (X2) and three bits-per-cell (X3) NAND flash memory architectures with production ramp to begin in the second half of 2014.
“We are thrilled to continue our technology leadership with the industry’s most advanced flash memory process node, enabling us to deliver the world’s smallest and most cost effective 128 gigabit chips,” said Dr. Siva Sivaram, senior vice president, memory technology, SanDisk. “We are delighted that these new chips will allow us to further differentiate and expand our portfolio of NAND flash solutions.”
The 15nm technology uses many advanced process innovations and cell-design solutions to scale the chips along both axes. SanDisk’s All-Bit-Line (ABL) architecture, which contains proprietary programming algorithms and multi-level data storage management schemes, has been implemented in the 1Z technology to deliver NAND flash solutions with no sacrifice in memory performance or reliability. SanDisk’s 1Z technology will be utilised across its broad range of solutions, from removable cards to enterprise SSDs.
